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BAT 70-05
Silicon Schottky Diodes * Parallel connection for maximum IF per package * Low forward voltage drop * For power supply * For clamping and protection
4
3 2 1
VPS05163
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BAT 70-05
Marking BAT 70-05
Ordering Code Pin Configuration Q62702-A1223 1 = A1 2 n.c.
Package
3 = A2 4=C1/C2 SOT-223
Maximum Ratings Parameter Reverse voltage, TS < 75C 1) Reverse voltage, TS < 50C 1) Peak reverse voltage, T S < 70C, t < 10ms 2) Forward current Average forward current (50/60Hz, sinus) Surge forward current (t< 100s) Total power dissipation, T S 130 C Symbol Value 50 70 70 1.5 1.5 5 1.5 3 150 - 65 ...+150 C W A Unit V
VR VR VRM IF I FAV I FSM Ptot
Total power dissipation, both diodes, T S 120 C Ptot Junction temperature Tj Storage temperature
T stg
1)
Maximum Ratings Junction - ambient
RthJA RthJS
82 12
K/W
Junction - soldering point
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu 2) see DC/pulse derating curve V R = f (T A) Semiconductor Group Semiconductor Group 11
Jun-02-1998 1998-11-01
BAT 70-05
Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter DC characteristics Reverse current Symbol min. Values typ. max. A 10 60 1 100 1000 15 mA V 0.2 0.26 0.33 0.52 0.6 Unit
IR
VR = 50 V VR = 70 V
Reverse current
IR VF
-
VR = 50 V, TA = 75 C
Forward voltage
I F = 1 mA I F = 10 mA I F = 100 mA I F = 1.5 A
AC characteristics Diode capacitance
CT
236 48.8 -
pF
VR = 0 V, f = 1 MHz VR = 10 V, f = 1 MHz
Forward voltage V F = f (TA)
for t p = 10ms and 100ms, Duty cycle < 1/100
80
V
VR
60
50
40
30
20
tp =DC tp =100ms tp =10ms
10
0 0
20
40
60
80
100
120 C
150
TA
Semiconductor Group Semiconductor Group
22
Jun-02-1998 1998-11-01

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